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LaAlO3 Wafers φ76.2x0.5mm <100> DSP

Code: 645-014

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Material LaAlO3 crystals Orientation <100>
Orientation Error ±0.5° Size Φ76.2mm
Thickness 0.5(±0.05)mm Surface Finish DSP
Roughness Ra<0.5nm Cleaness and Package 1000 grade clean room, 100 grade bags


Basic Properties:

Crystal Structure M6(normal  temperature)
Unit Cell Constant M6 a=5.357Å   c=13.22Å
M3 a=3.821Å
Melt Point(℃) 2080 Density 6.52(g/cm3)
Hardness 6-6.5(mohs) Thermal Expansion 9.4x10-6/℃
Dielectric Constants ε=21 Secant Loss(10ghz) ~3×10-4@300k,
Color and Appearance To anneal and conditions differ from brown to brownish Chemical Stability Room temperature is not dissoluble in minerals, the temperature
is greater than 150 ℃ in soluble h3pO4
Characteristics For microwave electron device

LaAlO3 (Lanthanum aluminate) single crystal has a good lattice match to many materials with perovskite structure. It is an excellent wafers for epitaxial growth of high temperature superconductors (HTS) , magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. 

Hangzhou Shalom EO not only provides the stocked standard epi ready LaAlO3 wafers, but also the custom type wafers upon your request.