Lithium Aluminate or LiAlO2 is a potential substrate for III-V nitride thin films due to its excellent lattice mismatch to GaN (<0.2% at <100> ), chemical stability at high temperature and cost effective. The lattice parameter of Lithium Dioxogallate (LiGaO2) and Lithium Aluminium Oxide (γ) (LiAlO2) crystal can match with the Gallium Nitride film very well. The mismatch coefficients are 0.2% and 1.4% only for LiGaO2 and LiAlO2, much smaller than that of the common used substrates such as <0001> sapphire (14%), <100> MgO (3%), <0001> SiC (3.5%). The Gallium Nitride film is a very important material for blue, violet, UV and white LED. A substrate material that matches the film to be grown well is very important to get a nice GaN epitaxial film.
| Specifications | |
| Orientations | <100>, <110>, <111> |
| Orientation Tolerance | ±0.5° |
| Standard Size (mm) | Ф30,Ф20, 20×20, 15×15,10×10,10×5,10x3mm |
| Thickness | 0.35 mm, 0.5 mm and 1.0 mm |
| Dimensional Tolerance | ±0.1mm |
| Grown Boule | 55 mm dia. x 50-80 mm length |
| Surface Quality | 20/10 S/D |
| Flatness | 1/4 Lambda @633nm for thickness less than 2mm |
| Parallelism | 30 arc sec. |
| Perpendicularity | 5 arc minutes |
| Wavefront Distortion | <1/4 Lambda @ 633nm |
| Micro Roughness (5μmx5μm） | Ra:<1Å |