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  • MgO:LiNbO3 Crystals for EO Applications
  • MgO:LiNbO3 Crystals for EO Applications

MgO:LiNbO3 Crystals for EO Applications

  • Low Half Wave Voltage
  • High Electro-Optical Coefficients
  • Brewster for laser of low amplification
  • Higher Damage Threshold than none doping LiNbO3
  • Preferable for Er:YAG, Ho:YAG and Tm:YAG lasers
Inquire Us  

Modules or Types:

A variety types of crystals are available upon your request:

  1. Crystal boules with inspection polishing
  2. Crystal blanks with inspection polishing
  3. Crystals with laser grade polishing
  4. Crystals with AR coating and Cr-Au electrode

 

Specifications:

Crystal Materials MgO(5mol%):LiNbO3 crystals Size Customized
Size Tolerance +/-0.1mm Length Tolerance +/-0.2mm
Surface Quality 20/10 S/D Parallelism <20 arc seconds
Flatness < Lambda/10 @633nm Chamfer 0.1-0.3mmx45°
Chips <0.15mm Side Surface Fine ground
Orientation Tolerance < 10 arc minutes Wavefront Distortion <Lambda/4@633nm
Extinction Ratio >200:1 Coating AR/AR@1064nm or customized
Damaging Threshold >300mW/cm^2@1064nm 10nS 10Hz pulse Electrode on Side Surface Chrome gold electrode (Cr+Au)
 

 

Basic Properties:

Crystal Structure Trigonal, space group R3c Cell Parameters a = 0.515, c = 13.863, Z = 6
Melting Point 1255±5℃ Curie Point 1140±5℃
Mohs Hardness 5 Density 4.64 g/cm3
Absorption Coefficient ~ 0.1%/cm @ 1064nm Solubility insoluble in H2O
Relative Dielectric Constant eT11/e0: 85
eT33/e0: 29.5
Thermal Expansion Coefficients( @ 25℃) ||a, 2.0 x 10-6 /K
||c, 2.2 x 10-6 /K
Thermal Conductivity 38 W /m /K @ 25℃
 

 

Linear Optical Properties:

Transparency Range 420-5200nm Refractive Indices ne=2.146, no = 2.220 @ 1300nm
ne= 2.156, no = 2.232 @ 1064nm
ne= 2.203, no = 2.286 @ 632.8nm
Optical Homogeneity ~ 5 x 10-5 /cm

Sellmeier Equations (λ in mm)

n2o (λ) = 4.9048+0.11768/(l2 - 0.04750) - 0.027169l2
n2e (λ) = 4.5820+0.099169/(l2 - 0.04443) - 0.021950l2
 

 

Nonlinear Optical Properties:

NLO Coefficients d33 = 34.4 pm/V
d31 = d15 = 5.95 pm/V
d22 = 3.07 pm/V
Efficiency NLO Coefficients deff =5.7 pm/V or ~14.6 x d36 (KDP)
for frequency doubling 1300nm
deff =5.3 pm/V or ~13.6 x d36(KDP)
for OPO pumped at 1064nm
deff =17.6 pm/V or ~45 x d36(KDP)
for quasi-phase-matched structure
Electro-Optic Coefficients gT33 = 32 pm/V, gS33 = 31 pm/V
gT31 = 10 pm/V, gS31=8.6 pm/V
gT22 = 6.8 pm/V, gS22= 3.4 pm/V
Half-Wave Voltage, DC
Electrical field||z, light ^z
Electrical field||x or y, light||z
3.03 KV
4.02 KV

MgO:LiNbO3 crystals have become one of the most commonly used material for Q-switches and phase modulators for its high EO coefficients, MgO:LiNbO3 has a higher damaging threshold than the non-doping LiNbO3 crystals. With an electric field applied transverse to the direction of light propagation, LiNBO3 cells can be configured to operate at a lower voltage than comparable KD*P cells. LiNbO3 can also be a good choice for infrared wavelengths as long as 3.0 µm.

Hangzhou Shalom EO offers the high quality polished,  AR coating and Au-Cr electroded MgO:LiNbO3 crystals used in pockels cells, the MgO doping of 0.6%, 1.0% and 5% is available. 

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  • Maximum Aperture: 50mm
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  • Cr-Au Electrode
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  • Preferable for Er:YAG, Ho:YAG and Tm:YAG lasers
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LiNbO3 Z-Cut, 10x10x20mm, Rectangular, Au electroded for EO applications

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Code: 2043-003

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