|Size(mm)||10×3, 10×5, 10×10, 15×15, 20×15|
|Thickness||0.5mm, 1.0mm||Size Tolerance||<±0.1mm|
|Thickness Tolerance||<±0.015mm(special in<±0.005mm)||Polishing||SSP (single surface polished) or
DSP (double surface polished)
|Redirection Precision||±0.5°||Redirection the Edge||2°(special in 1°)|
|Crystal Structure||M3||Melt Point(℃)||1420|
|O Content (/cm3)||≤1~1.8×1018||≤1~1.8×1018||≤1~1.8×1018|
|C Content (/cm3)||≤5×1016||≤5×1016||≤5×1016|
Semiconductor silicon wafers are usually made of high-purity polycrystalline silicon ingots using the CZ Method to grow silicon single crystal ingots with different resistivities, the Si wafers are made by crystal orientation→outer-round barrel grinding→processing the primary and secondary reference planes→ Slicing → chamfering → heat treatment → grinding → chemical corrosion → polishing → cleaning → inspection → packaging and other processes.
Single Crystal Silicon for solar energy applications includes p-type and n-type silicon. Ultra high purity silicon is used in the semiconductor industry as a result of its semiconducting properties. Silicon is also used as an alloying element in the manufacture of certain alloys (e.g. ferrosilicon, an alloy of iron and silicon which is used to introduce silicon into steel and cast iron).
Hangzhou Shalom EO offers the various grade of Silicon (Si) wafers and substrates, they are used as substrates for GaN (Gallium Nitride) epitaxial film growth, semiconductor research and industries.