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MgAl2O4 Substrates

  • Stocked and custom MaAl2O4 (or Spinel) Substrates available
  • Maximum diameter: 2 inches, typical thickness 0.5/1.0mm
  • Surface Roughness: Ra < 0.5nm
  • Clean package: 1000-grade clean room and 100-grade bags
  • Orientation of MgAl2O4 substrates:<100>,<110>,<111>
  • Applications: epitaxial thin film growth in ferroelectric and high-temperature superconductor (HTS) devices, growth of high-quality GaN films, III-V nitrides device, bulk acoustic wave, and microwave devices
Inquire for custom product  
Code Size Thickness Orientation Surface Finish Unit Price Delivery Cart
644-001 5x5mm 0.5mm <100> SSP Inquire 2 weeks
644-002 5x5mm 0.5mm <100> DSP Inquire 2 weeks
644-003 5x5mm 0.5mm <110> SSP Inquire 2 weeks
644-004 5x5mm 0.5mm <111> SSP Inquire 2 weeks
644-005 10x10mm 0.5mm <100> SSP Inquire 2 weeks
644-006 10x10mm 0.5mm <100> DSP Inquire 2 weeks
644-007 10x10mm 0.5mm <110> SSP Inquire 2 weeks
644-008 10x10mm 0.5mm <111> SSP Inquire 2 weeks
644-009 Φ12.7mm 0.5mm <100> SSP Inquire 2 weeks
644-010 Φ12.7mm 0.5mm <100> DSP Inquire 2 weeks
644-011 Φ25.4mm 0.5mm <100> SSP Inquire 2 weeks
644-012 Φ25.4mm 0.5mm <100> DSP Inquire 2 weeks
644-013 Φ50.8mm 0.5mm <100> SSP Inquire Inquire
644-014 Φ50.8mm 0.5mm <100> DSP Inquire Inquire

Magnesium Aluminate (MgAl2O4) single crystals, also known as spinels, possess a cubic crystal structure and exhibit excellent mechanical, thermal, and chemical stabilities. MgAl2O4 substrates exhibit optical transmittance over a wide spectral range, from UV to IR, along with low dielectric loss, making them suitable for optical and photonic applications. MgAl2O4 finds widespread usage in bulk acoustic wave and microwave devices and is an excellent substrate material for fast epitaxial growth of III-V nitrides in IC with moderate cost. MgAl2O4 is cleaved on the (100) plane,  therefore GaN LD cavities can be obtained by cleaving MgAl2O4 substrates along the (100) direction, which will also work well for ZnO. 

Hangzhou Shalom EO provides stock epi-ready MgAl2O4 wafers and custom MgAl2O4 wafers.

Common Specifications:

Material MgAl2O4 crystals Orientation <100>,<110>,<111>
Orientation Error ±0.5° Maximum Diameter 20mm
Typical Thickness 0.5mm, 1.0mm Thickness Tolerance ±0.05mm
Size Tolerance ±0.1mm Surface Finish SSP or DSP
Roughness Ra<0.5nm Cleaness and Package 1000 grade clean room, 100 grade bags

Physical Properties:

Crystal Structure Cubic: a = 8.083 Å Growth Method Czochralski
Density 3.64 g/cm3 Melt Point 2130℃
Hardness 8.0 (Mohns) Thermal Expansion 7.45 (x10-6/℃)
Phase Velocity 6500 m/s at (100> shear wave) Propagation Loss 6.5 dB/ms
Typical Growth Direction <100> and <110> Color Colorless
Dielectric Constant 8-9
MgAl2O4 Wafers Φ50.8mmx0.5mm <100> DSP

MgAl2O4 Wafers Φ50.8mmx0.5mm <100> DSP

MgAl2O4 Wafers Φ50.8mmx0.5mm <100> SSP

MgAl2O4 Wafers Φ50.8mmx0.5mm <100> SSP

MgAl2O4 Wafers 10x10x0.5mm <110> SSP

MgAl2O4 Wafers 10x10x0.5mm <110> SSP