Orientation | Optical axis C normal to the rod axis | Ti2O3 Concentration | 0.06 - 0.26atm % |
Figure of Merit(FOM) | 100~200 | α490 | 1.0-4.0cm-1 |
Diameter | 2-30mm or specified | Path Length | 2-30mm or specified |
End Configurations | Flat/Flat or Brewster/Brewster ends | Flatness | <λ/10 @ 633nm |
Parallelism | <10 arc sec | Surface Finishing | <20/10 scratch/dig per MIL-PRF-13830B |
Wavefront Distortion | <λ/4 per inch |
Physical and Optical Properties:
Chemical Formula | Ti3+: Al2O3 | Crystal Structure | Hexagonal |
Lattice Constants | a=4.758, c=12.991 | Density | 3.98 g/cm3 |
Melting Point | 2040℃ | Mohs Hardness | 9 |
Thermal Conductivity | 52 W/m/k | Laser Wavelength | 600-1050nm |
Thermal Expansion Coefficient | 5x10-6XK-1 |
Titanium-doped Sapphire (Ti:Sapphire) is one of the most prevalent laser crystals for tunable and ultrashort pulsed lasers with high gain and high power outputs. Shalom EO offers high-quality Ti:sapphire crystals grown using the Temperature Gradient Technique (TGT) with absorption from 1.0-4.0cm^-1 at 490nm. Shalom EO’s TGT-grown Ti:sapphire crystal is characterized by the (0001) oriented growth, featuring large figure of merit, high gain, broad gain bandwidth, while also exhibiting excellent thermal conduction, large laser cross-section, and exceptional laser damage threshold. Dislocation densities less than 10^2cm^-2 contributing to minimized light scatter can be obtained.
Application Notes:
Laser Crystal Comparison Chart: