Specifications:
| Orientation |
Optical axis C normal to rod axis |
Ti2O3 Concentration |
0.06 - 0.26atm % |
| Figure Of Merit(FOM) |
100~200 |
α490 |
1.0-4.0cm-1 |
| Diameter |
2-30mm or specified |
Path Length |
2-30mm or specified |
| End Configurations |
Flat/Flat or Brewster/Brewster ends |
Flatness |
<λ/10 @ 633nm |
| Parallelism |
<10 arc sec |
Surface Finishing |
<20/10scratch/dig to MIL-PRF-13830B |
| Wavefront Distortion |
<λ/4 per inch |
|
Physical and Optical Properties:
|
Chemical Formula |
Ti3+: Al2O3 |
Crystal Structure |
Hexagonal |
| Lattice Constants |
a=4.758, c=12.991 |
Density |
3.98 g/cm3 |
| Melting Point |
2040℃ |
Mohs Hardness |
9 |
| Thermal Conductivity |
52 W/m/k |
|
Titanium doped Sapphire (Ti:Sapphire) is the most widely used laser crystal for widely tunable and ultrashort pulsed lasers with high gain and high power outputs. The Ti:Sapphire crystals of Shalom EO is grown by the method of Temperature Gradient Technique (TGT), the large-sized (Dia.30x 30mm) Ti:Sapphire crystal in high quality free of light scatter, with the dislocation density less than 102cm-2 could be provided. The TGT grown sapphire crystal is characterized by the (0001) oriented growth, high doping level (a490= 4.0cm-1), high gain and laser damage threshold.
Application Notes:
- The tunable wavelengths that cover a broad range from 700 to 1000nm make Ti:Sapphire an excellent substitute for dye lasers in many applications.
- Doubling by NLO crystals such as BBO in an ultra-thin, Ti:Sapphire can be used to generate UV and DUV (up to 193nm) laser with ultrafast pulses below 10fs.
- Ti:Sapphire is also widely used as the pumping source of OPOs greatly to expand the tunable range.
