|Thickness||Rank 300, Rank 350,
|300 ± 25 µm, 350 ± 25 µm,
400 ± 25 µm
|Orientation||C-axis(0001) ± 0.5°|
|Resistivity(@300K)||< 0.5 Ω•cm||>106 Ω•cm|
|Dislocation Density||Less than 5x106 cm-2|
|Usable Surface Area||> 90%|
|Polishing||Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
|Package||Packaged in a class 100 clean room environment,
in single wafer containers, under a nitrogen atmosphere.
With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN (Gallium Nitride) crystals and wafers is not only short-wave-length optoelectronic material, but also a well alternate material for high temperature semiconductor devices. Based on the stabile physical and chemical properties, GaN is suitable for LED applications (blue, green, UV-light), ultraviolet detectors and optoelectronic high-power and high-frequency devices.
Hangzhou Shalom EO offers the custom gallium nitride wafers and substrates according to customer's request, option of N-type and semi-insulating types GaN wafers are available. Our gallium nitride crystals and wafers are widely used in various LED's, blue light laser diodes and ultra-violet (UV) laser diodes (LD), high power electronic devices and high frequency electronic devices.