Wafers and Substrates
Gallium nitride (GaN) thin films are changing the game for multiple industries where their properties like wide bandgap (3.4 eV), high electron mobilities, and thermal stabilities are leveraged. GaN thin films are excellent for the following applications:
1. Power electronics: GaN’s high breakdown voltage and switching efficiencies enable transformative advances in the conversion and management of energies. Typical application cases include Electric Vehicles (EVs) and power supplies.
2. Optoelectronics: where gallium nitride's direct bandgap and UV emission capabilities drive innovations in light-based technologies like LEDs and Lasers, UV photonics;
3. RF and High-Frequency Devices: GaN’s high electron saturation velocity makes it ideal for wireless and satellite communications like 5G networks and satellite systems.
Gallium nitride (GaN) thin film growth relies heavily on substrate selection and growth techniques to balance crystal quality, thermal management, and cost. Hangzhou Shalom EO offers various substrate materials for GaN thin film growth, including Al2O3(Sapphire), Si, GaAs, LiAlO2, MgAl2O4, SiC, ZnO, and GaN substrates. All the substrates are Epi-ready.
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