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LaAlO3 Substrates

  • Maximum diameter: 3 inches, typical thickness 0.5/1.0mm
  • Orientation of LaAlO3 substrates: <100>,<110>,<111>
  • Surface Roughness: Ra < 0.5nm
  • Clean package: class 1000 clean room, class 100 bags
  • Applications: epitaxial growth of high temperature superconductors (HTS), magnetic and ferroelectric thin films, low loss microwave and dielectric resonance applications
Inquire for custom product  
Code Size Thickness Orientation Surface Finish Unit Price Delivery Cart
645-001 5x5mm 0.5mm <100> SSP Inquire 2 weeks
645-002 5x5mm 0.5mm <100> DSP Inquire 2 weeks
645-004 5x5mm 0.5mm <111> SSP Inquire 2 weeks
645-005 10x10mm 0.5mm <100> SSP Inquire 2 weeks
645-006 10x10mm 0.5mm <100> DSP Inquire 2 weeks
645-007 10x10mm 0.5mm <110> SSP Inquire 2 weeks
645-008 10x10mm 0.5mm <111> SSP Inquire 2 weeks
645-009 φ25.4mm 0.5mm <100> SSP Inquire 2 weeks
645-010 φ25.4mm 0.5mm <100> DSP Inquire 2 weeks
645-011 Φ50.8mm 0.5mm <100> SSP Inquire 2 weeks
645-012 Φ50.8mm 0.5mm <100> DSP Inquire 2 weeks
645-013 Φ76.2mm 0.5mm <100> SSP Inquire Inquire
645-014 Φ76.2mm 0.5mm <100> DSP Inquire Inquire

LaAlO3 (Lanthanum aluminate) single crystal with a perovskite crystal structure, has a good lattice match to multiple materials with a similar perovskite structure. Its wide bandgap, thermal stabilities, and low dielectric loss make it excellent for applications in electronics of high frequencies, optics, and indispensable platforms for the epitaxial growth and research of thin films and heterostructures. Various materials can be grown on LaAlO2, including complex oxides, high-temperature superconductors, magnetic materials, and multiferroics. LaAlO3 exhibits a high dielectric constant, making it useful in capacitor applications. 

Hangzhou Shalom EO provides stock epi-ready LaAlO3 wafers and custom LaAlO3 wafers upon request.

Applications of LaAlO3 Substrates:

  • Epitaxial Growth: LaAlO3 substrates serve as templates for the epitaxial growth of complex oxide thin films, including high-temperature superconductors, magnetic materials, and multiferroics. The lattice match between LaAlO3 and the deposited material enables the precise control of film quality and interface properties.
  • Electronics: In electronics, LaAlO3 substrates find applications in the fabrication of high-performance field-effect transistors (FETs), resistive random-access memory (RRAM), and photonic devices. The compatibility of LaAlO3 with various deposition techniques allows for the integration of diverse functional materials and device architectures.
  • Optoelectronics: LaAlO3 substrates play a crucial role in the development of optoelectronic devices such as light-emitting diodes (LEDs), photodetectors, and electro-optic modulators. The transparent nature of LaAlO3 in the visible and near-infrared spectrum makes it suitable for optical applications.
  • Fuel Cells and Sensors: LaAlO3-based thin films are investigated for applications in solid oxide fuel cells (SOFCs), gas sensors, and catalysis. The high chemical stability and ionic conductivity of LaAlO3 facilitate efficient ion transport and electrode performance.

Common Specifications:

Material LaAlO3 crystals Orientation <100>,<110>,<111>
Orientation Error ±0.5° Maximum Diameter 3 inches
Typical Thickness 0.5mm, 1.0mm Thickness Tolerance ±0.05mm
Size Tolerance ±0.1mm Surface Finish SSP or DSP
Roughness Ra<0.5nm Cleanness and Package class 1000 clean room, class 100 bags

Curves:

1)Typical X-Ray Diffraction (XRD) Curve of LaAlO3 <100> Crystals Substrates 




2) Typical Surface Roughness of  substrate LaAlO3 <100> and <001> measured by Atomic Force Microscope (AFM) in 5μm x 5μm Scale








LaAlO3 Wafers φ50.8x0.5mm <100> SSP

LaAlO3 Wafers φ50.8x0.5mm <100> SSP

LaAlO3 Wafers φ50.8x0.5mm <100> DSP

LaAlO3 Wafers φ50.8x0.5mm <100> DSP

LaAlO3 Wafers φ25.4x0.5mm <100> SSP

LaAlO3 Wafers φ25.4x0.5mm <100> SSP