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LaAlO3 Substrates

  • Maximum diameter: 3 inches, typical thickness 0.5/1.0mm
  • Orientation of LaAlO3 substrates: <100>,<110>,<111>
  • Surface Roughness: Ra < 0.5nm
  • Clean package: 1000 grade clean room and 100 grade bags
  • Applications: epitaxial growth of high temperature superconductors (HTS), magnetic and ferro-electric thin films, low loss microwave and dielectric resonance applications
Inquire for custom product  
Code Size Thickness Orientation Surface Finish Unit Price Delivery Cart
645-001 5x5mm 0.5mm <100> SSP Inquire 2 weeks
645-002 5x5mm 0.5mm <100> DSP Inquire 2 weeks
645-004 5x5mm 0.5mm <111> SSP Inquire 2 weeks
645-005 10x10mm 0.5mm <100> SSP Inquire 2 weeks
645-006 10x10mm 0.5mm <100> DSP Inquire 2 weeks
645-007 10x10mm 0.5mm <110> SSP Inquire 2 weeks
645-008 10x10mm 0.5mm <111> SSP Inquire 2 weeks
645-009 φ25.4mm 0.5mm <100> SSP Inquire 2 weeks
645-010 φ25.4mm 0.5mm <100> DSP Inquire 2 weeks
645-011 Φ50.8mm 0.5mm <100> SSP Inquire 2 weeks
645-012 Φ50.8mm 0.5mm <100> DSP Inquire 2 weeks
645-013 Φ76.2mm 0.5mm <100> SSP Inquire Inquire
645-014 Φ76.2mm 0.5mm <100> DSP Inquire Inquire

LaAlO3 (Lanthanum aluminate) single crystal has a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high temperature superconductors (HTS), magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. 

Hangzhou Shalom EO not only provides the stocked standard epi-ready LaAlO3 wafers, but also the custom type wafers upon request.

Common Specifications:

Material LaAlO3 crystals Orientation <100>,<110>,<111>
Orientation Error ±0.5° Maximum Diameter 3 inches
Typical Thickness 0.5mm, 1.0mm Thickness Tolerance ±0.05mm
Size Tolerance ±0.1mm Surface Finish SSP or DSP
Roughness Ra<0.5nm Cleaness and Package 1000 grade clean room, 100 grade bags

Curves:

1)Typical X-Ray Diffraction (XRD) Curve of LaAlO3 <100> Crystals Substrates 




2) Typical Surface Roughness of  substrate LaAlO3 <100> and <001> measured by Atomic Force Microscope (AFM) in 5μm x 5μm Scale








LaAlO3 Wafers φ50.8x0.5mm <100> SSP

LaAlO3 Wafers φ50.8x0.5mm <100> SSP

LaAlO3 Wafers φ50.8x0.5mm <100> DSP

LaAlO3 Wafers φ50.8x0.5mm <100> DSP

LaAlO3 Wafers φ25.4x0.5mm <100> SSP

LaAlO3 Wafers φ25.4x0.5mm <100> SSP