|Orientation||<100>, <110>, <111>±0.5º||Size(mm)||10x3, 10x5, 10x10, 15x15, 20x15, 20x20
dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm
|Thickness||0.5mm, 1.0mm||Polishing||SSP (single surface polished) or
DSP (double surface polished)
|Growth Method||Czochralski||Crystal Structure||M3|
|Lattice Constant||a=5.65754 Å||Density||5.323g/cm3|
|Doped Material||No doped||Sb-doped||Ga –doped|
Germanium is a rare metal and contains many unique properties and merits, germanium is a semiconductor. Our developed techniques have led to the production of crystalline germanium for semiconductors that has an extremely low impurity. The merits of Germanium include strong corrosion-resistance, high chemical stability, easy processing, high and uniform transmittance, high refractive index, high radiation resistance and good photoelectric performance. Germanium or Ge substrates are interesting alternatives for epitaxial growth or layer transfer of III-V compounds, because of the closely-matching thermal and similar lattice constants, germanium substrates can be used to make gallium arsenide solar cells.
Germanium is less expensive and more mechanically strong than Gallium Arsenide (GaAs). Therefore Ge substrates can be thinned, and cells can be made larger, reducing the weight and cost of space arrays. The germanium substrates can always be used to manufacture semiconductor devices, infrared optics and solar cell substrates.
Hangzhou Shalom EO provides wafers which are precisely "off-cut" towards the appropriate direction and are clean package with 1000 grade clean room and 100 grade bags.