Substrates and Wafers for Semiconductor Film Growth

Epitaxial thin films are crystalline thin films with atoms arranged in very regular arrangement following their substrates, which serve as seed crystals. In the application context of semiconductors, semiconductor thin films such as silicon grown on substrates stand out with unique advantages that can not be realized using other measures, the advantages include that the semiconductor thin films offer a direct means for creating controlled and abrupt changes in dopant profiles, and also allow the creation of strained crystalline films that give the device designer more freedom control electron mobilities by a technique known as band gap engineering. There are also compound semiconductor thin films such as GaAs, AlGaAs, GaN, CdSe, InP, InSb, etc. where these semiconductors find versatile usages in applications like Dense Wavelength Division Multiplexing (DWDM) lasers, Vertical Cavity Surface Emitting Lasers (VCSELs), as well as for high-speed electronics circuits, power supplies.

The substrate used for epitaxial semiconductor thin film growth can have a significant impact on the characteristics of epitaxial thin films of semiconductors. The crystallographic characteristics of the substrate on which the semiconductor thin film is grown and interfacial relationships between the substrate and epitaxial thin film are all vital factors that determine the performance of the resultant semiconductor thin films grown.

Hangzhou Shalom EO provides substrates used to grow various semiconductor thin films like silicon or III-V semiconductor thin films (e.g. GaAs or InP), which serve critical roles across a wide range of applications including microelectronics and integrated circuits (ICs), solar cells and photovoltaics, photodetectors, and sensors, etc. Our product catalog runs from GaAs, GaSb, Ge, InAs, InP, Si, SiC, ZnO, and CZT (CdZnTe), all the substrates are Epi-ready.