|Material||ZnO single crystal||Size(mm)||25×25×0.5, 10×10×0.5, 10×5×0.5, 5×5×0.5|
|Orientation||<0001>, <11-20>, <10-10>±0.5°||Polishing||Single or Double surface polished (SSP or DSP)|
|Transparency Range||0.4-0.6 µm; > 50%@2µm||Surface Roughness||Ra: ≦0.5nm|
Note: customize special orientation and size of the substrate is available.
|Crystal Structure||M6||Lattice Constant||a=3.252Å c=5.313 Å|
|Melt Point(℃)||1975||Coefficient of Thermal Expansion||a /6.5 x 10-6 /℃
c /3.7 x 10-6 /℃
|Specific Heat(g.m)||0.125 cal||Pyroelectricity Constant||1200 mv/k @ 300 ℃|
|Thermal Conductivity(cm/k)||0.006 cal||Chemical Stability||Insoluble in water|
Zinc Oxide (ZnO) has the potential to become the substrate material of choice for Gallium Nitride (GaN). Like GaN, it has a wurtzite structure, with lattice constants closely matches to GaN (a=3.249, c=5.205). The lattice mismatch between ZnO and GaN is only ε=0.017. Perhaps most important is that it is a soft compliant material which is believed to take up the lattice stress in preference to the growing GaN layer. It suffers from the drawback that it dissociates in ammonia at temperatures above 600°C. ZnO is a good choice for epitaxial film growth of GaN.
Zinc oxide (ZnO) has a wide band-gap, ZnO crystal has a good lattice integrity, which is essential for the fabrication of high-quality ZnO-based semiconductor devices. ZnO wafers are widely used in high-efficiency semiconductor photocatalysis, semiconductor photoelectronic devices and magnetic semiconductors.
Hangzhou Shalom EO offers the customized high quality crystals substrates and wafers of ZnO according to customer's special request.