Indium Phosphide (InP) Wafers and Substrates

High electron mobility, good radiation stability, and large band gap
Surface Roughness(Ra)≤5Å
For epitaxial growth of indium gallium arsenide
Superior performance in high-power and high-frequency electronics
S/Fe/Zn doping optional
Application fields: optical fiber communication, microwave, millimeter wave(MMV), radiation-resistant solar cells, Etc.

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Specifications:

Material	InP single crystal	Orientation	<100>
Size(mm)	Dia50.8×0.35mm,10×10×0.35mm 10×5×0.35mm	Surface Roughness	Ra:≤5A
Polishing	SSP (single surface polished) or DSP (double surface polished)

Chemical Properties of InP Crystal:

Single Crystal	Doped	Conduction Type	Carrier Concentration	Mobility Ratio	Dislocation Density	Standard Size
InP	/	N	(0.4-2)×10¹⁶	(3.5-4) ×10³	5×10⁴	Φ2×0.35mm Φ3×0.35mm
InP	S	N	(0.8-3) ×10¹⁸ (4-6) ×10¹⁸	(2.0-2.4) ×10³ (1.3-1.6) ×10³	3×10⁴ 2×10³	Φ2×0.35mm Φ3×0.35mm
InP	Zn	P	(0.6-2) ×10¹⁸	70-90	2×10⁴	Φ2×0.35mm Φ3×0.35mm
InP	Fe	N	10⁷-10⁸	≥2000	3×10⁴	Φ2×0.35mm Φ3×0.35mm

Basic Properties:

Crystal Structure	Tetrahedral(M4)	Lattice Constant	a = 5.869 Å
Density	4.81g/cm³	Melt Point	1062 °C
Molar Mass	145.792 g/mol	Appearance	Black cubic crystals
Chemical Stability	Slightly soluble in acids	Electron Mobility(@300K)	5400 cm²/(V·s)
Bandgap(@300 K)	1.344eV	Thermal Conductivity(@300K)	0.68 W/(cm·K)
Refractive Index	3.55(@632.8nm)

Indium Phosphide (InP) is an important III-V compound and semiconductor material with advantages of high electron mobility, good radiation stability, and large band gap. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. With stable physical and chemical properties, InP is widely used in optical fiber communication, microwave, millimeter wave(MMV), radiation-resistant solar cells and other fields. InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Indium Phosphide (InP) is also used in high-power and high-frequency electronics (High-electron-mobility transistor, Heterojunction bipolar transistor) because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistors that could operate at 604 GHz. Also today’s state-of-the-art high-efficiency solar cells for concentrator photovoltaics (CPV) and for space applications use (Ga)InP and other III-V compounds to achieve the required bandgap combinations

Indium Phosphide has particular advantage in two applications:

Photonics : Emission and detection capacities with more than 1,000nm wave length.

RF: High-speed and low noise performance in high frequency RF applications. InP is the first choice for performance-driven niche markets in communication, radar, test equipment, and radiation measurement.

Hangzhou Shalom EO offers the cutom Indium Arsenide substrate and wafers according to customer's request, with good surface roughness less than 0.5nm and clean package of 1000 grade clean room and 100 grade bags.