Substrate for HTSC Film Growth

  • Because the dielectric constant and loss microwave band of MgO single crystal is very small, and the large size MgO substrate (diameter of 2 inches and larger) can be obtained, it has currently become an important industrial HTS thin monocrystalline substrate. MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic, semiconductor and high Tc superconductor applications. There is also a growing amount of interest in using MgO substrates for the III to V elements, and in research studying the epitaxial effects of substrates on the crystallization of polymers. Other applications include the deposition of ferro electric thin film coatings on magnesium oxide substrates. And there are also growing applications for MgO in the field of plasma display panel (PDP) technology.
  •  SrTiO3 single crystal provides a good lattice match to most materials with Perovskite structure.  It is an excellent substrate for epitaxial growth of HTS and many oxide thin films. Its lattice constant (3.905Å) fits the common high Tc superconductive material YBCO (3.88 Å) very well. It has twin-less crystal structure and very good physical and mechanical properties for film growth. It is suitable for various high Tc films such as YBCO, Bi-system, La-system and others. SrTiO3 is an excellent and wide applied High Tc superconductive single crystalline substrate.
  • Magnesium Aluminate (MgAl2O4 or spinel) single crystals are widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. It is also found that MgAl2O4 is a good substrate for III-V nitrides device. Spinel (MgAl2O4) is one candidate for such GaN LDs substrate. The crystallographic structure of MgAl2O4 is a spinel type (Fd3m), and its lattice constant is 8.083 A. MgAl2O4 is a relatively low-cost substrate material, which has been successfully applied to the growth of high quality GaN films. MgAl2O4 is cleaved on the (100) plane. GaN LD cavities have been obtained by simply cleaving MgAl2O4 substrates along the (100) direction, which will also work well for ZnO. MgAl2O4 crystal is very difficult to grow, due to the difficulty in maintaining a single phase structure. 
  • LSAT - Lanthanum Strontium Aluminum Tantalum Oxide or (La,Sr)(Al,Ta)O3 is a mixed perovskite crystal substrate for epitaxial thin films in ferroelectric and high temperature superconductor devices. 
  • LaAlO3 (Lanthanum aluminate) single crystal has a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high temperature superconductors (HTS) , magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Hangzhou Shalom EO provides the cut blanks and epi-polished LaAlO3 substrates according to your request.
  • There is no phase transition for LaSrAlO4 crystals from melting temperature to a lower temperature, and it has the same structure with high-temperature superconductor YBCO, but LaSrAlO4 has a lower coefficient of thermal expansion than the other perovskite structure crystals. it can be used to grow films at a lower temperature, and thereby improve the lattice mismatch and reduce stress.
  • Potassium niobate (or KTaO3) single crystal has a stable cubic structure, KT crystals can be used to make the laser modulators and semiconductor components. KTaO3 crystals has no phase transition from absolute zero to its melting point (1645K), it’s crystal cell has a good match to YBCO system superconductors.  
  • YSZ (Yttria-stabilized zirconia) single crystal substrate is one of the earliest materials which applied in high-temperature superconducting films. With high hardness, high firmness, high tenacity, less abrasiveness and good chemical erode resistant property, Zirconium Oxide has already been widely various fields, such as ceramics、refractories、machinery、electronics、optics、space and aeronautics industry、biology and chemistry, etc. The common used Zirconia needs to be doped with Yttrium as a stabilizer. And the usual concentration of it is 13 mol%. YSZ has good mechanical stability and chemical stability with lower cost.
  • Hangzhou Shalom EO provides YAlO3(YAP) crystal substrates. With the similar structure to YAG crystals, YAlO3(YAP) is an important crystal substrates material with excellent optical performance and physical and chemical properties. RE(rare earth) and transition-metal ions doped with YAP are widely used for the applications of lasers, scintillators, holographic record and optical data storage, dosimeters for ionizing irradiation, substrates for HTSC Film Growing, etc.

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